Frontispiece: Pentafluoroethylated Compounds of Silicon, Germanium and Tin
نویسندگان
چکیده
منابع مشابه
Silicon-based silicon-germanium-tin heterostructure photonics.
The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifi...
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Mass spectra of C(CI-I3)" Si(CI-I3)" Ge(CI-I3)" Sn(CI-I3)" and Pb (CI-Ia), were obtained with a Consolidated 21103 mass spectrometer. I sotopic abundan ces of carbon , si licon , germanium, tin, and lead were obtained from t he observed spectra and used to calculate the monoisotopic spectra. The mass spectra of t he Group IV tetramethyls a re qualitatively similar. The principal ion in each cas...
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Recent experimental results which have described the characterization of the first, stable heavier group 14 element analogues of acetylenes are outlined. It is shown that the use of large terphenyl substituents allows the isolation of transition metal-heavier group 14 element complexes that can achieve essential triple bonding by a three-fold orbital interaction between the transition metal and...
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Exohedral derivatization of endohedral metallofullerenes (EMFs) has been exploited as a useful method for characterizing the structural and chemical properties of EMFs, and for functionalizing them for potential applications. The introduction of heteroatoms, such as electropositive silicon atoms, to fullerene cages is a novel functionalization method that remarkably affects the electronic chara...
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With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In...
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ژورنال
عنوان ژورنال: Chemistry - A European Journal
سال: 2018
ISSN: 0947-6539
DOI: 10.1002/chem.201886261